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oH VE S CO AV R M AI SIO PL LA N IA BL S NT E
TISP4070M3BJ THRU TISP4115M3BJ, TISP4125M3BJ THRU TISP4220M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP4xxxM3BJ Overvoltage Protector Series
TISP4xxxM3BJ Overview
This TISP(R) device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The TISP4xxxM3BJ is available in a wide range of voltages and has a medium current capability. These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350M3BJ meets the FCC Part 68 "B" ringer voltage requirement (VDRM = 275 V) and survives the Type B impulse tests. For FCC Part 68 ADSL applications, the TISP4360H3BJ is recommended. The TISP4360H3BJ has an extra 15 V in working level (VDRM = 290 V) to avoid clipping the ADSL signal during ringing peaks. The TISP4xxxM3BJ series is housed in a surface mount SMB (DO-214AA) package.
Summary Electrical Characteristics
Part # TISP4070M3 TISP4080M3 TISP4095M3 TISP4115M3 TISP4125M3 TISP4145M3 TISP4165M3 TISP4180M3 TISP4200M3 TISP4220M3 TISP4240M3 TISP4250M3 TISP4265M3 TISP4290M3 TISP4300M3 TISP4350M3 TISP4360M3 TISP4395M3 TISP4400M3 VDRM V 58 65 75 90 100 120 135 145 155 160 180 190 200 220 230 275 290 320 300 V(BO) V 70 80 95 115 125 145 165 180 200 220 240 250 265 290 300 350 360 395 400 VT @ IT V 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 IDRM A 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 I(BO) mA 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 IT A 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 IH mA 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 Co @ -2 V pF 72 72 72 72 52 52 52 52 52 52 42 42 42 42 42 42 42 42 42 Functionally Replaces P0640SA P0720SA P0900SA P1100SA P1300SA P1500SA P1800SA P2300SA P2600SA P3100SA P3500SA
Bourns part has an improved protection voltage
Summary Current Ratings
Parameter Waveshape Value 2/10 300 1.2/50, 8/20 220 10/160 120 ITSP A 5/320 100 10/560 75 10/1000 50 ITSM A 1 cycle 60 Hz 32 di/dt A/s 2/10 Wavefront 300
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJ Overvoltage Protector Series
ITU-T K.20/21/44/45 rating ............... 4 kV 10/700, 100 A 5/310 Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
Device `4070 `4080 `4095 `4115 `4125 `4145 `4165 `4180 `4200 `4220 `4240 `4250 `4265 `4290 `4300 `4350 `4360 `4395 `4400 VDRM V 58 65 75 90 100 120 135 145 155 160 180 190 200 220 230 275 290 320 300 V(BO) V
MDXXBGE
SMBJ Package (Top View)
R(B) 1
2 T(A)
70 80 95 115 125 145 165 180 200 220 240 250 265 290 300 350 360 395 400
SD4XAA
Device Symbol
T
R
Terminals T and R correspond to the alternative line designators of A and B
Rated for International Surge Wave Shapes
Wave Shape 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s
Standard GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K.20/21/45 FCC Part 68 GR-1089-CORE
ITSP A 300 220 120 100 75 50
Low Differential Capacitance .................................39 pF max.
(R)
............................................ UL Recognized Component
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.
How To Order
For Standard Termination Finish Order As TISP4xxxM3BJR TISP 4xxxM3BJ For Lead Free Termination Finish Order As TISP4xxxM3BJR-S TISP 4xxxM3BJ-S
Device
Package
Carrier Embossed Tape Reeled Bulk Pack
TISP 4xxxM3BJ BJ (J-Bend DO-214AA/SMB)
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJ Overvoltage Protector Series
Description (continued)
The TISP4xxxM3BJ range consists of nineteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000 TISP4xxxH3BJ series is available.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating `4070 `4080 `4095 `4115 `4125 `4145 `4165 `4180 `4200 `4220 `4240 `4250 `4265 `4290 `4300 `4350 `4360 `4395 `4400 Symbol Value 58 65 75 90 100 120 135 145 155 160 180 190 200 220 230 275 290 320 300 Unit
Repetitive peak off-state voltage, (see Note 1)
VDRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 300 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 120 5/200 s (VDE 0433, 10/700 s voltage wave shape) 110 ITSP A 0.2/310 s (I3124, 0.5/700 s voltage wave shape) 100 5/310 s (ITU-T K.20/21/45, K.44 10/700 s voltage wave shape) 100 5/310 s (FTZ R12, 10/700 s voltage wave shape) 100 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 75 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) 50 Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 30 ITSM 16.7 ms (60 Hz) full sine wave 32 A 1000 s 50 Hz/60 Hz a.c. 2.1 Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A di T/dt 300 A/s Junction temperature TJ -40 to +150 C Storage temperature range Tstg -65 to +150 C NOTES: 1. See Applications Information and Figure 11 for voltage values at lower temperatures. 2. Initially, the TISP4xxxM3BJ must be in thermal equilibrium with TJ = 25 C. 3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions. 4. See Applications Information and Figure 12 for current ratings at other temperatures. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/C for ambient temperatures above 25 C.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter Repetitive peak offstate current Test Conditions VD = VDRM TA = 25 C TA = 85 C `4070 `4080 `4095 `4115 `4125 `4145 `4165 `4180 `4200 `4220 `4240 `4250 `4265 `4290 `4300 `4350 `4360 `4395 `4400 `4070 `4080 `4095 `4115 `4125 `4145 `4165 `4180 `4200 `4220 `4240 `4250 `4265 `4290 `4300 `4350 `4360 `4395 `4400 0.15 0.15 5 TA = 85 C 10 Min Typ Max 5 10 70 80 95 115 125 145 165 180 200 220 240 250 265 290 300 350 360 395 400 78 88 102 122 132 151 171 186 207 227 247 257 272 298 308 359 370 405 410 0.6 3 0.35 Unit A
IDRM
V(BO)
Breakover voltage
dv/dt = 250 V/ms, R SOURCE = 300
V
V(BO)
Impulse breakover voltage
dv/dt 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A
V
I(BO) VT IH dv/dt ID
Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current
dv/dt = 250 V/ms, R SOURCE = 300 I T = 5 A, t W = 100 s I T = 5 A, di/dt = +/-30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85V DRM VD = 50 V
A V A kV/s A
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter Test Conditions f = 1 MHz, Vd = 1 V rms, VD = 0, Min 4070 thru `4115 `4125 thru `4220 `4240 thru `4400 `4070 thru `4115 `4125 thru `4220 `4240 thru `4400 `4070 thru `4115 `4125 thru `4220 `4240 thru `4400 `4070 thru `4115 `4125 thru `4220 `4240 thru `4400 `4125 thru `4220 `4240 thru `4400 Typ 83 62 50 78 56 45 72 52 42 36 26 19 21 15 Max 100 74 60 94 67 54 87 62 50 44 31 22 25 18 Unit
f = 1 MHz, Vd = 1 V rms, VD = -1 V
Coff
Off-state capacitance
f = 1 MHz, Vd = 1 V rms, VD = -2 V
pF
f = 1 MHz, Vd = 1 V rms, VD = -50 V
f = 1 MHz, Vd = 1 V rms, VD = -100 V (see Note 6) NOTE 6: To avoid possible voltage clipping, the `4125 is tested with V D = -98 V.
Thermal Characteristics
Parameter Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, (see Note 7) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 C 52 Min Typ Max 115 C/W Unit
RJA
Junction to free air thermal resistance
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJ Overvoltage Protector Series
Parameter Measurement Information
+i ITSP Quadrant I Switching Characteristic
ITSM IT VT IH
V(BO)
I(BO)
-v IDRM
V DRM
VD
ID ID VD VDRM
IDRM +v
I(BO)
IH
V(BO)
VT IT ITSM I
Quadrant III Switching Characteristic ITSP -i
PMXXAAB
Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
100 VD = 50 V 10 |I D| - Off-State Current - A Normalized Breakover Voltage
TCMAG
1.10
NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4MAF
1.05
1
0*1
1.00
0*01
0*001 -25 0 25 50 75 100 TJ - Junction Temperature - C 125 150
0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 2.
Figure 3.
ON-STATE CURRENT vs ON-STATE VOLTAGE
100 70 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0.7 '4125 THRU '4200 TA = 25 C t W = 100 s Normalized Hol ding Current
TC4MACA
2.0
NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4MAD
1.5
IT - On-State Current - A
1.0 0.9 0.8 0.7 0.6 0.5 0.4
'4240 THRU '4400 1
'4070 THRU '4115 1.5 2 31 4 5 VT - On-State Voltage - V 7 10
-25
0 25 50 75 100 TJ - Junction Temperature - C
125
150
Figure 4.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
Figure 5.
TISP4xxxM3BJ Overvoltage Protector Series
Typical Characteristics
1 0.9 0.8 Capacitance Normal zed to VD = 0 i 0.7 0.6 0.5
NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC4MABB
TJ = 25 C Vd = 1 Vrms
DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE
TCMAEB
40 C - Differential Off-State Capacitance- pF
35
C = Coff(-2 V) - Coff (-50 V)
30
'4070 THRU '4115 0.4 '4125 THRU '4220 0.3 '4240 THRU '4400
25
0.2 0.5
1
2
3 5 10 20 30 VD - Off-state Voltage - V
50
100 150
20 50 60 70 80 90 100 150 200 250 300 350 VDRM - Repetitive Peak Off-State Voltage - V
Figure 6.
Figure 7.
TYPICAL CAPACITANCE ASYMMETRY vs OFF-STATE VOLTAGE TC4XBB
3 |Coff(+VD) - Coff(-VD) | -- Capacitance Asymmetry -- pF Vd = 10 mV rms, 1 MHz
2
1
Vd = 1 V rms, 1 MHz
0 0.5 0.7 1
2
3 45
7 10
20 30 4050
VD -- Off-State Voltage -- V
Figure 8.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJ Overvoltage Protector Series
Rating and Thermal Information
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION
ITSM(t) - Non-Repetitive Peak On-State Current - A 30 VGEN = 600 Vrms, 50/60 Hz 20 15 10 9 8 7 6 5 4 3 2 1.5 0*1 RGEN = 1.4*VGEN /ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C
TI4MAC
THERMAL IMPEDANCE vs POWER DURATION
150 Z A(t) - Transie nt Thermal Impedance - C/W 100 90 80 70 60 50 40 30 20 15 10 9 8 7 6 5 4 0*1 ITSM(t) APPLIED FOR TIME t EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C 1 10 t - Power Duration - s 100 1000
TI4MAE
1
10 t - Current Duration - s
100
1000
Figure 9.
Figure 10.
VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE
1.00
TI4MADA
IMPULSE RATING vs AMBIENT TEMPERATURE
400 BELLCORE 2/10 300
TC4MAA
0.99 '4125 THRU '4200 Impulse Current - A 0.98 Derating Factor
250 200 150 120 100 90 80 70 60 ITU-T 10/700 FCC 10/560 IEC 1.2/50, 8/20
0.97
FCC 10/160
0.96
0.95
'4070 THRU '4115
0.94 '4240 THRU '4400 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25
50 BELLCORE 10/1000 40 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80
TAMIN - Minimum Ambient Temperature - C
TA - Ambient Temperature - C
Figure 11.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
Figure 12.
TISP4xxxM3BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
Deployment
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 13) or in multiples to limit the voltage at several points in a circuit (Figure 14).
Th3 Th1 Th1 Th2
Figure 13. Two Point Protection
Figure 14. Multi-Point Protection
In Figure 13, protector Th1 limits the maximum voltage between the two conductors to V(BO). This configuration is normally used to protect circuits without a ground reference, such as modems. In Figure 14, protectors Th2 and Th3 limit the maximum voltage between each conductor and ground to the V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its V(BO) value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1 is not required.
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values.
Standard
Peak Voltage Setting V
Voltage Wave Shape s 2/10 10/1000 10/160 10/560 9/720 9/720 0.5/700
Peak Current Value A
Current Wave Shape s
TISP4XXXM3 25 C Rating A
Series Resistance
2500 500 2/10 300 11 1000 100 10/1000 50 1500 200 10/160 120 2x5.6 800 100 10/560 75 3 FCC Part 68 1500 37.5 5/320 100 0 (March 1998) 1000 25 5/320 100 0 I3124 1500 37.5 0.2/310 100 0 37.5 1500 5/310 100 0 10/700 ITU-T K.20/K.21 100 4000 FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator GR-1089-CORE
If the impulse generator current exceeds the protector's current rating, then a series resistance can be used to reduce the current to the protector's rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generator's peak voltage by the protector's rated current. The impulse generator's fictive impedance (generator's peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. For the FCC Part 68 10/560 waveform, the following values result. The minimum total circuit impedance is 800/75 = 10.7 and the generator's fictive impedance is 800/100 = 8 . This gives a minimum series resistance value of 10.7 - 8 = 2.7 . After allowing for tolerance, a 3 10% resistor would be suitable. The 10/160 waveform needs a standard resistor value of 5.6 per conductor. These would be R1a and R1b in Figure 16 and Figure 17. FCC Part 68 allows the equipment to be non-operational after the 10/160 (conductor to ground) and 10/560 (interconductor) impulses. The series resistor value may be reduced to zero to pass FCC Part 68 in a non-operational mode, e.g. Figure 15. For this type of design, the series fuse must open before the TISP4xxxM3 fails. For Figure 15, the maximum fuse i2t is 2.3 A2s. In some cases, the equipment will require verification over a temperature range. By using the rated waveform values from Figure 12, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 C to 85 C.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJ Overvoltage Protector Series
AC Power Testing
The protector can withstand currents applied for times not exceeding those shown in Figure 9. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) thermistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 9. In some cases, there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
Capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly dependent on connection inductance. In many applications, such as Figure 16 and Figure 18, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V. Figure 8 shows the typical capacitance asymmetry; the difference between the capacitance measured with a positive value of VD and the capacitance value when the polarity of VD is reversed. Capacitance asymmetry is an important parameter in ADSL systems where the protector often has no d.c. bias and the signal level is in the region of 10 V.
Normal System Voltage Levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the ring trip circuit. Figure 11 allows the calculation of the protector VDRM value at temperatures below 25 C. The calculated value should not be less than the maximum normal system voltages. The TISP4265M3BJ, with a VDRM of 200 V, can be used for the protection of ring generators producing 100 V rms of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 18). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature when the VDRM has reduced to 190/200 = 0.95 of its 25 C value. Figure 11 shows that this condition will occur at an ambient temperature of -28 C. In this example, the TISP4265M3BJ will allow normal equipment operation provided that the minimum expected ambient temperature does not fall below -28 C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller 76.2 mm x 114.3 mm (3.0 " x 4.5 ") PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worst case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance, and can dissipate higher power levels than indicated by the JESD51 values.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJ Overvoltage Protector Series
Typical Circuits
MODEM RING FUSE RING DETECTOR HOOK SWITCH TISP4350 TIP D.C. SINK SIGNAL Th1 Th2 RING WIRE R1b E.G. LINE CARD
TIP WIRE
R1a Th3 PROTECTED EQUIPMENT
AI6XBK
AI6XBMA
Figure 15. Modem Inter-Wire Protection
Figure 16. PROTECTION MODULE
R1a Th3 Th1 Th2 R1b SIGNAL
AI6XBL
D.C.
Figure 17. ISDN Protection
OVERCURRENT PROTECTION TIP WIRE R1a Th3 Th1 Th2 RING WIRE R1b S3b S1b S2b Th5 S1a S2a SLIC
RING/TEST PROTECTION
TEST RELAY
RING RELAY
SLIC RELAY S3a
SLIC PROTECTION
Th4
TISP6xxxx, TISPPBLx, TISP6NTP2 C1 220 nF V BAT
TEST EQUIPMENT
RING GENERATOR
AI6XBJ
Figure 18. Line Card Ring/Test Protection
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Footprint
SMB Pad Size 2.54 (.100)
2.40 (.095)
DIMENSIONS ARE:
MILLIMETERS (INCHES)
2.16 (.085)
MDXX BIA
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device TISP4070M3BJ TISP4080M3BJ TISP4095M3BJ TISP4115M3BJ TISP4125M3BJ TISP4145M3BJ TISP4165M3BJ TISP4180M3BJ TISP4200M3BJ TISP4220M3BJ TISP4240M3BJ TISP4250M3BJ TISP4265M3BJ TISP4290M3BJ TISP4300M3BJ TISP4350M3BJ TISP4360M3BJ TISP4395M3BJ TISP4400M3BJ
Symbolization Code 4070M3 4080M3 4095M3 4115M3 4125M3 4145M3 4165M3 4180M3 4200M3 4220M3 4240M3 4250M3 4265M3 4290M3 4300M3 4350M3 4360M3 4395M3 4400M3
Device Symbolization Code
Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in the most practical carrier. For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape. For Standard For Lead Free Termination Finish Termination Finish Order As Order As Carrier
Embossed Tape Reel Pack Bulk Pack
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJR TISP4xxxM3BJ
TISP4xxxM3BJR-S TISP4xxxM3BJ-S
TISP4xxxM3BJ Overvoltage Protector Series
MECHANICAL DATA
SMBJ (DO-214AA) Plastic Surface Mount Diode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB 4.06 - 4.57 (.160 - .180)
3. 30 - 3. 94 (.130 - .155)
1
2
Index Mark (if needed)
2. 00 - 2.40 (.079 - .094)
0. 76 - 1.52 (.030 - .060) 5. 21 - 5.59 (.205 - .220)
MILLIMETERS (INCHES)
1. 90 - 2.10 (.075 - .083)
0. 10 - 0. 20 (.004 - .008)
1. 96 - 2. 32 (.077 - .091)
DIMENSIONS ARE:
MDXXBHAA
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxM3BJ Overvoltage Protector Series
MECHANICAL DATA
Tape Dimensions
SMB Package Single-Sprocket Tape
3. 90 - 4.10 (.154 - .161 ) 1. 95 - 2.05 (.077 - .081)
1. 55 - 1.65 (.061 - .065 ) 1. 65 - 1.85 (.065 - .073 ) 0. 40 MAX . (.016)
5. 45 - 5.55 (.215 - .219 ) 11.70 - 12.30 (.461 - .484 )
8. 20 MAX . (.323)
7. 90 - 8.10 (.311 - .319 ) Direction of Feed
1. 5 MIN . (.059) Carrier Tape Embossment 20
0 MIN .
Cover Tape 4. 5 MAX . (.177)
Maximium component rotation
Index Mark (if needed)
Typical component cavity center line Typical component center line
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in) MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions: Reel diameter: 330 mm 3.0 mm (12.99 in .118 in) Reel hub diameter: 75 mm (2.95 in) MIN. Reel axial hole: 13.0 mm 0.5 mm (.512 in .020 in) C. 3000 devices are on a reel.
MDXXBJA
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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